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PJ4800
30V N-Channel Enhancement Mode MOSFET
SOIC-08
FEATURES
* RDS(ON), VGS@10V,IDS@8A=20m * RDS(ON), VGS@5.0V,IDS@6A=31m * Advanced Trench Process Technology * High Density Cell Design For Ultra Low On-Resistance * Specially Designed for DC/DC Converters * Fully Characterized Avalanche Voltage and Current * Pb free product : 99% Sn above can meet RoHS environment substance directive request
MECHANICALDATA
* Case: SOIC-08 Package * Terminals : Solderable per MIL-STD-750D,Method 1036.3 * Marking : 4800
PIN Assignment
8 7 6 5
1
2
3
4
1. Source 2. Source 3. Source 4. Gate 5. Drain 6. Drain 7. Drain 8. Drain
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER Drain-Source Voltage Gate-Source Voltage Continous Drain Current Pulsed Drain Current (1) Avalanche Energy L=0.1mH,I D=8A,VDD=25V Power Dissipation TC=25oC TC=75oC TC=25oC
SYMBOL VDS VGS ID I DM EAS PD TJ,TSTG RJA
VALUE 30 +20 8 32 3.2 3 2 -55 to +175 50
UNIT
V V A A mJ
W
Operating Junction and Stroage Temperature Range Junction-to-Ambient Thermal Resistance(PCB Mounted)2
www..com DC current limited by the package Note: 1. Maximum
2. Surface mounted on FR4 board, t < 10 sec
o
C
o
C/W
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
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PJ4800
ELECTRICAL CHARACTERISTICS (Tc=25oC,Unless Otherwise Noted )
PA RA M E TE R S YM B O L T E S T C O N D IT IO N S M IN . T YP. MAX. U N IT
S TA T IC
D r a i n- S o ur c e B r e a k d o wn Vo lta g e
V (BR)D S S V GS (TH)
V GS = 0 V, I V D S = V GS , I
D=25 0A D=250A D=8A D=6 A
30 1 8 10
16 23 -
3 20 31 +10 0 1 25 -
V V m m nA A A A S
G a t e Thr e s ho ld Vo lt a g e D r a i n - S o ur c e O n- s t a t e R e s i s t a nc e Gate-B ody Leakage Ze ro Ga te Vo lta g e D ra i n C ur r e n t O n- S t a t e D r a i n C u r r e nt F o r w a r d Tr a n s c o n d u c t a n c e
V GS= 1 0 V, I
R D S ( ON)
V GS= 5 V,I
I
GS S
V D S = 0 V , V GS = + 2 0 V V DS= 2 4 V, V GS= 0 V
I
DSS
V D S = 2 4 V , V GS = 0 V , T J = 1 2 5 oC I
D ( ON)
V DS= 1 0 V,V GS= 1 0 V V DS= 5 V,I
D=8 A
g fs
D YN A M IC
V D S = 1 5 V , V GS = 5 V , I To t a l G a t e C h a r g e QG
D=8A
-
7.0 1 4 .2 1 .2 2 3.44 7.8 11 . 6 2 8 .8 5.6 520 11 2 98
-
nC nC nC nC nS nS nS nS pF pF pF
G a t e -S o ur c e C ha rg e G a t e -D r a i n C ha rg e Tu r n - O n D e l a y Ti m e R i s e Ti m e Tu r n - O f f D e l a y Ti m e F a l l Ti m e Inp u t C a p a c i t a nc e O ut p u t C a p a c i t a n c e R e v e r s e Tr a n s f e r C a p a c i t a n c e
Q GS QGD td (o n) tr td (off) tf C IS S C OS S C RSS
V D S = 1 5 V , V GS = 1 0 V I D=8A
-
V D S = 1 5 V , I D = 1 A , V GS = 1 0 V R GS = 6
-
V GS = 0 V , V D S = 1 5 V f=1 MHz
-
S O U R C E - D R A IN D IO D E R A T IN G S A N D C H A R A C T E R IS T IC S
C o n t i n u o us C u r r e n t F o rwa rd Vo lta g e I
S
I
F = 2 . 3 A , V GS = 0 V
-
2.3 1.2
A V
V SD
-
NOTE : Plus Test: Pluse Width < 300us, Duty Cycle < 2%.
Switching Test Circuit www..com VIN
VDD
Gate Charge Test Circuit
VGS VOUT
VDD
RL
RL
RG
1mA
RG
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PJ4800
Typical Characteristics Curves ( Ta=25, unless otherwise noted)
ID - Drain-to-Source Current (A)
40 ID - Drain Source Current (A) VGS= 10V, 6V
40
5.0V
30
VDS =10V
30
4.5V
20
20
TJ = 125oC
4.0V
10
3.5V 3.0V
10
25oC
-55oC
0 0 1 2 3 4 5
0 1.5
VDS - Drain-to-Source Voltage (V)
2 2.5 3 3.5 4 VGS - Gate-to-Source Voltage (V)
4.5
Fig.1 Output Characteristric
Fig.2 Transfer Characteristric
RDS(ON) - On-Resistance (m )
RDS(ON) - On-Resistance (m )
60 50 40 30 20 10 0 VGS=10.0V VGS = 5.0V
90 80 70 60 50 40 30 20 10 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 TJ =25oC 125oC
ID =8A
0
10
20
30
40
ID - Drain Current (A)
Fig.3 On Resistance vs Drain Current
Fig.4 On Resistance vs Gate to Source Voltage
RDS(ON) - On-Resistance(Normalized)
1.8 1.6 1.4 1.2 1
1000
C - Capacitance (pF)
VGS =10 V ID =8.0A
800 600 400 200 Crss 0 0 5 10 15 Coss Ciss
f = 1MHz VGS = 0V
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0.6 -50 -25 0 25 50 75 100 125 150
0.8
20
25
TJ - Junction Temperature (oC)
VDS - Drain-to-Source Voltage (V)
Fig.5 On Resistance vs Junction Temperature
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Fig.6 Capacitance
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PJ4800
Typical Characteristics Curves ( Ta=25, unless otherwise noted)
10 VGS - Gate-to-Source Voltage (V) 8 6 4 2 0 0 4 8 12 16
100
IS - Source Current (A)
VDS =15 V ID =8.0A
VGS = 0V
10
TJ = 125oC -55oC
1
0.1
25oC
0.01 0.2 0.4 0.6 0.8 1 1.2 1.4
Qg - Gate Charge (nC)
VSD - Source-to-Drain Voltage (V)
Fig. 7 Gate Charge Waveform
36 35 34 33 32 31 30 29
Fig.8 Source-Drain Diode Forward Voltage
Vth - G-S Threshold Voltage (Normalized)
BVDSS - Breakdown Voltage (V)
1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.9 Breakdown Voltage vs Junction Temperature
TJ - Junction Temperature (oC) Fig.10 Threshold Voltage vs Junction Temperature
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PJ4800
MOUNTING PAD LAYOUT
ORDER INFORMATION
* Packing information T/R - 3K per 13" plastic Reel
LEGAL STATEMENT Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others.
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